0

2

4

6

8

10

12

14

16

0

2

4

6

8

10

12

14

16

P (W)

360

O

=1 80

o

= 120

o

=90

o

=60

o

=30

o

DC

I

(A)

T(AV)

Fig.1 : Maximum average power dissipation ver-

sus average on-state current.

0

10203040

5060708090 100 110 120 130

0

2

4

6

8

10

12

14

16

18

20

I

(A)

T(AV)

= 180

o

DC

Tcase ( C)

o

Fig.3 : Average on-state current versus case tem-

perature.

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

Igt

Tj( C)

o

Ih

-40

-20

0

20

40

60

80

100

120 140

Igt[Tj]

Igt[Tj=25 C]

o

Ih[Tj]

Ih[Tj=25 C]

o

Fig.5 : Relative variation of gate trigger current and

holding current versus junction temperature.

020

40

60

80

100

120

140

0

2

4

6

8

10

12

14

16

-85

-95

-105

-115

-125

P (W)

Tcase ( C)

o

= 180

o

Tamb ( C)

o

Rth = 0 C/W

1C/W

2C/W

4C/W

o

o

o

o

Fig.2 : Correlation between maximum average

power dissipation and maximum allowable tem-

perature (Tamb and Tcase) for different thermal

resistances heatsink + contact.

1E-3

1E-2

1E-1

1E +0

1 E +1

1E +2 5 E+2

0.01

0.1

1

Zth/Rth

Zt h( j-c )

Zt h( j-a )

tp (s )

Fig.4 : Relative variation of thermal impedance

versus pulse duration.

1

10

100

100 0

0

50

100

150

200

I

(A)

TSM

Tj initial = 25 C

o

Number of cycles

Fig.6 : Non repetitive surge peak on-state current

versus number of cycles.

®

S16xxxH

3/5