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IXTY4N70X2 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTY4N70X2 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXTY4N70X2 · FEATURES · Drain Source Voltage- : VDSS ≥ 700V · Static Drain-Source On-Resistance : RDS(on) ≤ 850mΩ@VGS= 10V · Fast Switching · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Easy to Mount · Space Savings · High Power Density · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Plused 8 A PD Total Dissipation @TC=25℃ 80 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.56 ℃ /W |
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