General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

20

V

Collector-Base Voltage

40

V

Emitter-Base Voltage

5

V

Collector current-continuoun

IC

500

mAdc

THERMAL CHARATEERISTICS

Symbol

Max

Unit

Total Device Dissipation FR-5 Board, (1)

225

mW

1.8

mW/

Thermal Resistance, Junction to Ambient

556

300

mW

2.4

mW/

Thermal Resistance, Junction to Ambient

417

Junction and Storage Temperature

Tj ,Tstg

-55 to +150

DEVICE MARKING

=25

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

V

e

g

a

t

l

o

V

n

w

o

d

k

a

e

r

B

r

e

t

t

i

m

E

-

r

o

t

c

e

ll

o

C

(BR)CEO

20

-

-

V

V

e

g

a

t

l

o

V

n

w

o

d

k

a

e

r

B

e

s

a

B

-

r

e

t

t

i

m

E

(BR)EBO

5

-

-

V

V

e

g

a

t

l

o

V

n

w

o

d

k

a

e

r

B

e

s

a

B

-

r

o

t

c

e

ll

o

C

(BR)CBO

40

-

-

V

A)

I

)

V

5

3

=

CBO

-

-

150

nA

I

)

V

4

=

EBO

150

nA

Characteristic

Total Device Dissipation

Derate above 25

Rating

Derate above 25

Characteristic

2

EMITTER

3

COLLECTOR

1

BASE

θ

A)

µ

µ

FEATURE

ORDERING INFORMATION

10000/Tape&Reel

Device

Shipping

X

FTC9012SX

SOT-23

SOT-23

Package

FTC9012SP=12P

FTC9012SQ=12Q

FTC9012SR=12R

FTC9012SS=12S

We declare that the material of product compliance with RoHS requirements.

FTC9012SX

SEMICONDUCTOR

TECHNICAL DATA

FTC9012S

2011. 06. 03

1/2

Revision No : 1

SOT– 23

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