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ISC1864 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISC1864 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon NPN RF Transistor ISC1864 DESCRIPTION · High fT 8.0GHz TYP. @VCE = 3 V, IC = 5 mA, f = 2 GHz · Low Cre 0.3pF TYP., @VCB = 3 V, IE = 0, f = 1 MHz · High ︱S21e︱2 7.5 dB TYP. @VCE = 3 V, IC = 5 mA, f = 2 GHz · 100% tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous 35 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
Similar Part No. - ISC1864 |
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Similar Description - ISC1864 |
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