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ISCSM99P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCSM99P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier ISCSM99P FEATURES · Low forward voltage · Guarding for stress protection · 150℃ operating junction temperature · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · For use in low voltage,high frequency inverters,free wheeling and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 45 V IF(AV) Average Rectified Forward Current 30 A IFSM Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load (JEDEC method) 300 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ HERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.4 ℃ /W |
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