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ISCSM103P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCSM103P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier ISCSM103P FEATURES · Low Forward Voltage · Low Leakage Current · High Temperature Glass Passivated Junction · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in switching power supplies and other power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 60 V IF(AV) Average Rectified Forward Current (Rated VR) 5 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, 60Hz) 125 A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Similar Part No. - ISCSM103P |
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