ISCNH98P datasheet(2/3 Pages) ISC

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ISCNH98P

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID=250uA

100

113

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID=250uA

2.0

3.0

4.0

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 40A

7.8

mΩ

IGSS

Gate-Body Leakage Current

VGS= ±20V;VDS= 0

100

IDSS

Zero Gate Voltage Drain Current

VDS= 100V; VGS= 0

Ciss

Input Capacitance

VDS=25V;VGS=0V; f=1.0MHz

6500

Coss

Output Capacitance

380

Crss

Reverse Transfer Capacitance

330

td(on)

Turn-on Delay Time

VDD=30V;ID=2A;RL=15Ω;

VGS=10V;RG=2.5Ω

Turn-on Rise Time

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDS=30V;ID=30A; VGS=10V

163

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VSD

Diode Forward On-voltage

IS= 40A ;VGS= 0

1.2

trr

Reverse Recovery Time

TJ = 25°C;IF = 40A;

di/dt = 100A/μs(Note)

Qrr

Reverse Recovery Charge

Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

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