STTH3R06 datasheet(2/9 Pages) STMICROELECTRONICS

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STTH3R06

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Table 3: Absolute Ratings (limiting values)

Table 4: Thermal Parameters

Table 5: Static Electrical Characteristics

To evaluate the conduction losses use the following equation: P = 1.03 x IF(AV) + 0.09 IF

(RMS)

Table 6: Dynamic Characteristics

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS) RMS forward voltage

IF(AV)

Average forward current

δ = 0.5

DO-201AD

Tl = 80°C

SMB

Tl = 55°C

SMC

Tl = 80°C

IFSM

Surge non repetitive forward current

DO-201AD

tp = 10ms

sinusoidal

SMB / SMC

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature

175

°C

Symbol

Parameter

Maximum

Unit

Rth(j-l)

Junction to lead

DO-201AD

L = 10 mm

°C/W

SMB

SMC

Rth(j-a)

Junction to ambient (see fig. 13)

DO-201AD

L = 10 mm

°C/W

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

Reverse leakage current

Tj = 25°C

VR = VRRM

3µA

Tj = 150°C

100

Forward voltage drop

Tj = 25°C

IF = 3A

1.7

Tj = 150°C

1.0

1.25

Symbol

Parameter

Test conditions

Min.

Typ Max.

Unit

trr

Reverse recovery

time

Tj = 25°C IF = 0.5A IRR = 0.25A IR = 1A

IF = 1A dIF/dt = -50 A/µs VR =30V

tfr

Forward recovery

time

Tj = 25°C IF = 3A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

100

VFP

Forward recovery

voltage

IF = 3A

dIF/dt = 100 A/µs

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