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ISCN39P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ISCN39P
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN39P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCN39P Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCN39P Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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1
isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ISCN39P
DESCRIPTION
·
Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·
Collector Saturation Voltage
: VCE(sat) = 1.5 (Max) @ IC= 8.0A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Be suited for switch mode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-peak
24
A
IB
Base Current
6
A
PC
Collector Power Dissipation
TC=25℃
100
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.25
℃
/W


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