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2SC3631-Z Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3631-Z Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC3631-Z DESCRIPTION · With TO-252(DPAK) packaging · Excellent linearity of hFE · Low collector-to-emitter saturation voltage · Fast switching speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Relay drivers · High-speed inverters · Converters · High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A PC Collector Power Dissipation @TC=25℃ 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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