MHT2012N datasheet(2/14 Pages) NXP

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RF Device Data

NXP Semiconductors

MHT2012N

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

–0.5, +65

Vdc

Gate--Source Voltage

VGS

–0.5, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

–65 to +150

C

Case Operating Temperature Range

–40 to +150

C

Operating Junction Temperature Range (1,2)

–40 to +150

C

Input Power

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 81C, 12.5 W, 2450 MHz

Stage 1, 28 Vdc, IDQ1 =12 mA

Stage 2, 28 Vdc, IDQ2 =72 mA

RJC

4.3

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JS--001--2017)

1B, passes 500 V

Charge Device Model (per JS--002--2014)

C3, passes 1000 V

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

260

C

Table 5. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 -- Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =32 Vdc, VGS =0 Vdc)

IDSS

—

500

nAdc

Gate--Source Leakage Current

(VGS =0.9 Vdc, VDS =0 Vdc)

IGSS

—

200

nAdc

Stage 1 -- On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID =3 Adc)

VGS(th)

0.8

1.2

1.6

Vdc

Fixture Gate Quiescent Voltage (4)

(VDS =28 Vdc, IDQ1 =12 mAdc)

VGG(Q)

—

4.9

—

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.nxp.com/RF/calculators.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

4. Data measured in NXP test fixture with 4.7 k resistor in series with VGS1 and VGS2 pins.

(continued)

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