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ISCN1894 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN1894 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCN1894 · FEATURES · Drain Current –ID= 22A@ TC=25℃ · Drain Source Voltage- : VDSS= 500V (Min) · Fast Switching · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Designed for high efficiency switch mode power supply. · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Plused 88 A PD Power Dissipation 400 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.30 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃ /W |
Similar Part No. - ISCN1894 |
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Similar Description - ISCN1894 |
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