ACE6901B datasheet(2/6 Pages) ACE

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ACE6901B

P-Channel Enhancement Mode Power MOSFET

VER 1.1

Ordering information

ACE6901B XX + H

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS = 0V, ID = -

250μA

-60

Zero Gate Voltage Drain Current

IDSS1

VDS = -60V, VGS = 0V

μA

Gate Threshold Voltage

VGS(TH)

VGS = VDS , IDS= -

250μA

-1.2

-1.6

-2.5

Gate Leakage Current

IGSS

VGS= ±20V , VDS=0V

±100

Drain-Source On-state

Resistance

RDS(on)

VGS = -10V , ID= -20A

7.2

mΩ

VGS = -4.5V , ID= -10A

9.1

Forward Trans Conductance

gFS

VDS= -10V , ID= -3A

Diode Forward Voltage

VSD

ISD= -10A , VGS= 0V

1.0

Diode Forward Current

-72

Switching

Total Gate Charge

VDS= -48V, ID= -5A,

VGS= -4.5V

141

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

28.6

Turn-on Delay Time

td( on )

VDD= -48V,ID= -10A,

VGS= -10V,RGEN= 5

Turn-on Rise Time

205

Turn-off Delay Time

td( off )

402

Turn-off Fall Time

197

Dynamic

Input Capacitance

Ciss

VDS=-25V,VGS= 0V,

f= 1.0MHz

8620

Output Capacitance

Coss

486

Reverse Transfer Capacitance

Crss

288

PN: DFN5*6-EP

Pb - free

Halogen - free

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