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FDMF2011 Datasheet(PDF) 21 Page - ON Semiconductor |
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FDMF2011 Datasheet(HTML) 21 Page - ON Semiconductor |
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21 / 31 page ![]() © 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMF2011 Rev.1.0 20 Typical Performance Characteristics (Q2 N-Channel) Tj = 25°C unless otherwise noted. 0 5 10 15 20 25 30 0 2 4 6 8 10 ID = 20 A VDD = 75 V VDD = 50 V Qg, GATE CHARGE (nC) VDD = 25 V Figure 56. Gate Charge Characteristics 0.1 1 10 100 1 10 100 1000 10000 f = 1 MHz VGS = 0 V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Figure 57. Capacitance vs. Drain to Source Voltage 25 50 75 100 125 150 0 10 20 30 40 50 RθθθθJC = 3.57 o C/W VGS = 10 V T C, CASE TEMPERATURE ( o C ) Figure 58. Maximum Continuous Drain Current vs. Case Temperature 0.1 1 10 100 600 0.1 1 10 100 500 CURVE BENT TO MEASURED DATA 10 µ µ µ µ s 100 ms/DC 10 ms 1 ms 100 µ µ µ µ s VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED R θ θ θ θ JC = 3.57 oC/W TC = 25 oC Figure 59. Forward Bias Safe Operating Area 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 10000 100000 SINGLE PULSE R θ θ θ θ JC = 3.57 o C/W T C = 25 o C t, PULSE WIDTH (sec) Figure 60. Single Pulse Maximum Power Dissipation |
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