| Manufacturer | Part # | Datasheet | Description |
 GREATECS |
RD1
|
314Kb / 1P |
10 x 10 mm Rotary DIP Switches with 3:3 Pinout
|
|
STA
|
167Kb / 1P |
4 x 3 mm Miniature SMT Tactile Switches
|
 Infineon Technologies A... |
TDA21220
|
1Mb / 26P |
High-Per formance DrMOS 6 mm x 6 mm x 0.8 mm IQFN
Revision 1.9, 2011-03-31 |
 ILSI America LLC |
38-BX0F12.5-32.768
|
51Kb / 2P |
2 Lead Metal Package Crystal, 3 mm x 8 mm, 2 mm x 6 mm, 1 mm x 5 mm
|
|
I408
|
34Kb / 1P |
Leaded Oscillator, OCXO Metal Package, 26 mm X 26 mm
|
 HK TO-GRACE TECHNOLOGY ... |
APHHS1005F3C-70MAV
|
778Kb / 4P |
1.0 x 0.5 mm Infrared Emitting Diode
|
 Fronter Electronics Co.... |
HC-49S-3PIN
|
185Kb / 2P |
3 Pin Dip Crystal 11.4x4.8 mm
|
 NXP Semiconductors |
NAFE11388
|
226Kb / 7P |
thermal enhanced very thin quad flat package, no leads, dimple wettable flank; 64 terminals, 0.5 mm pitch, 9 mm x 9 mm x 0.85 mm body
Rev. 1-29 December 2021 |
 Nexperia B.V. All right... |
GAN140-650FBE
|
318Kb / 14P |
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
19 April 2023 |
|
GAN190-650FBE
|
318Kb / 14P |
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
19 April 2023 |