[Micronas]

Introduction
The HAL 710 is a monolithic integrated Hall-effect sensor manufactured in CMOS technology with two independent Hall plates S1 and S2 spaced 2.35 mm apart.

Features
– generation of ‘Count Signals’ and ‘Direction Signals’
– delay of the ‘Count Signals’ with respect to the ‘Direction Signal’ of 1 µs minimum
– switching type latching
– low sensitivity
– typical BON: 14.9 mT at room temperature
– typical BOFF: −14.9 mT at room temperature
– temperature coefficient of −2000 ppm/K in all magnetic characteristics
– switching offset compensation at typically 150 kHz
– operation from 3.8 V to 24 V supply voltage
– operation with static magnetic fields and dynamic magnetic fields up to 10 kHz
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– robustness of magnetic characteristics against mechanical stress
– short-circuit protected open-drain outputs by thermal shut down
– constant switching points over a wide supply voltage range
– EMC corresponding to DIN 40839

Applications
The HAL 710 is the optimal sensor for position-control applications with direction detection and alternating magnetic signals such as:
– multipole magnet applications,
– rotating speed and direction measurement, position tracking (active targets), and
– window lifters.