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LM3641M Datasheet (PDF) - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
LM3641M Datasheet PDF - National Semiconductor (TI)
Part # LM3641M
Download  LM3641M Download
File Size   304.04 Kbytes
Page   16 Pages
Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)
Description Lithium-Ion Battery Pack Protection Circuit

LM3641M Datasheet (PDF)

Go To PDF Page Download Datasheet
LM3641M Datasheet PDF - National Semiconductor (TI)

Part # LM3641M
Download  LM3641M Click to download

File Size   304.04 Kbytes
Page   16 Pages
Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)
Description Lithium-Ion Battery Pack Protection Circuit

LM3641M Datasheet (HTML) - National Semiconductor (TI)


LM3641M Product details

General Description
The LM3641 Lithium Protection Integrated Circuit resides inside a 3.6V Lithium-Ion battery pack consisting of a single
cell or multiple parallel cells. The IC controls the ON/OFF
state of a pair of low threshold N-channel power MOSFETs
placed in series with the battery cell(s). The purpose of this
MOSFET pair is to protect the cell(s) from inadvertent electrical over-stress. The IC compares the cell voltage against
internally programmed minimum and maximum limits. Transient voltage faults of approximately 1.25 seconds are tolerated.
The IC also monitors the bi-directional current flow in the battery pack by measuring the voltage across a robust 4 mΩ
current sensing resistor internal to the protection IC package. The IC turns OFF the MOSFET pair whenever any fault
limit is exceeded. Momentary current surges <4 ms are tolerated.
The Enable pin allows external ON/OFF control of the MOSFET pair and resets the IC after the MOSFET pair is turned
OFF and the pack is safe to operate again.
The limits for overcharge and overdischarge voltage, as well
as independent limits for each direction of overcurrent are
factory adjusted employing EEPROM.

Features
- Automatic battery disconnect when the cell is
over-charged or over-discharged.
- Maximum cell voltage for MOSFET conduction is factory
programmable between 4.0V and 4.4V with a ±25 mV
tolerance (0˚C to +60˚C).
- Minimum cell voltage for MOSFET conduction =
0.57•VMAX ±3.5% (0˚C to +60˚C).
- Internal 4 mΩ current sense resistor provides ±0.5A
maximum accuracy for detection of overcurrent faults.
The maximum charge and discharge current is factory
programmable between 1A and 5A. A single overcurrent
fault event opens and protects the MOSFET pair.
- Automatic detection of safe pack conditions for recovery
(MOSFET pair ON) from a fault condition (over/under
discharged or overcurrent).
- Average current drain = 1.2 µA typical.
- Optional Enable pack terminal can be used to prevent
accidental short circuit of pack and for maximizing the
shelf life of the pack (IC powers down when the pack is
not in use).
- Over-current events cause connection of an internal
50 kΩ “FET-Bypass” resistance across OFF MOSFET
pair. Loads >3–7 MΩ are required for return to
conduction mode.
- Over-charged states cause connection ofa5kΩ
“Cell-Bypass” resistor to ensure that the cell is not
allowed to be overcharged by leakage paths.




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About National Semiconductor (TI)


National Semiconductor was an American semiconductor company that was founded in 1959.
The company was known for its innovations in the field of analog and mixed-signal integrated circuits and was a leading supplier of power management and data conversion products.
National Semiconductor's products were used in a variety of applications including consumer electronics, industrial, automotive, and telecommunications.
The company was acquired by Texas Instruments in 2011 and its products and technologies continue to be developed and sold under the Texas Instruments brand.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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