F6N80 Datasheet(PDF)

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F6N80 Datasheet (PDF) - STMicroelectronics


Part #	F6N80

Download	F6N80 Download

File Size	831.19 Kbytes

Page	15 Pages

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Description

Ultra low gate charge

F6N80 Datasheet (PDF)

Download Datasheet


Part #	F6N80

Download	F6N80 Click to download

File Size	831.19 Kbytes

Page	15 Pages

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

Description	Ultra low gate charge

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F6N80 Product details

Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features
• Industry’s lowest RDS(on)
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications

Similar Part No. - F6N80

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Similar Description - F6N80

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	STD6N90K5	825Kb / 16P	Ultra-low gate charge November 2016 Rev 1
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	STF7N80K5	689Kb / 14P	Ultra low gate charge 11-Oct-2013
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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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