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STPSC12H065-Y Datasheet (PDF) - STMicroelectronics

STPSC12H065-Y Datasheet PDF - STMicroelectronics
Part # STPSC12H065-Y
Download  STPSC12H065-Y Download
File Size   454.44 Kbytes
Page   9 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Dedicated to PFC applications

STPSC12H065-Y Datasheet (PDF)

Go To PDF Page Download Datasheet
STPSC12H065-Y Datasheet PDF - STMicroelectronics

Part # STPSC12H065-Y
Download  STPSC12H065-Y Click to download

File Size   454.44 Kbytes
Page   9 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Dedicated to PFC applications

STPSC12H065-Y Datasheet (HTML) - STMicroelectronics


STPSC12H065-Y Product details

Description
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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