General Description
Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR
4.0 Watts Single Ended
Package Style AC

HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT