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19NM60 Datasheet (PDF) - STMicroelectronics

19NM60 Datasheet PDF - STMicroelectronics
Part # 19NM60
Download  19NM60 Download
File Size   1026.99 Kbytes
Page   13 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 package

19NM60 Datasheet (PDF)

Go To PDF Page Download Datasheet
19NM60 Datasheet PDF - STMicroelectronics

Part # 19NM60
Download  19NM60 Click to download

File Size   1026.99 Kbytes
Page   13 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 package

19NM60 Datasheet (HTML) - STMicroelectronics


19NM60 Product details

Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.

Features
• Designed for automotive applications and
AEC-Q101 qualified
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance

Applications
• Switching applications




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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