IRG4PC40W Datasheet(PDF) - International Rectifier

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IRG4PC40W Datasheet (PDF) - International Rectifier

IRG4PC40W Datasheet PDF - International Rectifier


Part #	IRG4PC40W

Download	IRG4PC40W Download

File Size	116.25 Kbytes

Page	8 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Description

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

IRG4PC40W Datasheet (PDF)

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IRG4PC40W Datasheet PDF - International Rectifier


Part #	IRG4PC40W

Download	IRG4PC40W Click to download

File Size	116.25 Kbytes

Page	8 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

IRG4PC40W Datasheet (HTML) - International Rectifier

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IRG4PC40W Product details

Benefits
• Lower switching losses allow more cost-effective
   operation than power MOSFETs up to 150 kHz
   ("hard switched" mode)
• Of particular benefit to single-ended converters and
   boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
   recombination make these an excellent option for
   resonant mode switching as well (up to >>300 kHz)

Features
• Designed expressly for Switch-Mode Power
   Supply and PFC (power factor correction)
   applications
• Industry-benchmark switching losses improve
   efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
   tighter parameters distribution, exceptional reliability

Similar Part No. - IRG4PC40W

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRG4PC40WPBF	619Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR
	IRG4PC40WPBF	620Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR
	IRG4PC40WPBF	620Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR

Similar Description - IRG4PC40W

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRG4BC20U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
	IRG4BC30K	137Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
	IRG4BC30U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	IRG4BC40U	169Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
	IRG4BC40W	129Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
	IRG4PC30F	145Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4PC40U	148Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
	IRG4PC50F	146Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
	IRG4PSC71U	151Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)
	IRG4BC30KS	263Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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