IRFZ24N Datasheet(PDF) - International Rectifier

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IRFZ24N Datasheet (PDF) - International Rectifier

IRFZ24N Datasheet PDF - International Rectifier


Part #	IRFZ24N

Download	IRFZ24N Download

File Size	123.82 Kbytes

Page	8 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Description

Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

IRFZ24N Datasheet (PDF)

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IRFZ24N Datasheet PDF - International Rectifier


Part #	IRFZ24N

Download	IRFZ24N Click to download

File Size	123.82 Kbytes

Page	8 Pages

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

Description	Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

IRFZ24N Datasheet (HTML) - International Rectifier

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IRFZ24N Datasheet HTML 8Page - International Rectifier

IRFZ24N Product details

Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

• Advanced Process Technology

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

Similar Part No. - IRFZ24N

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	IRFZ24N	64Kb / 8P	N-channel enhancement mode TrenchMOS transistor February 1999 Rev 1.000
Kersemi Electronic Co.,...	IRFZ24N	741Kb / 8P	Advanced Process Technology
Inchange Semiconductor ...	IRFZ24N	163Kb / 2P	isc N-Channel MOSFET Transistor
ARTSCHIP ELECTRONICS CO...	IRFZ24N	596Kb / 8P	HEXFET Power MOSFET
International Rectifier	IRFZ24NL	159Kb / 10P	Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Similar Description - IRFZ24N

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRFZ24NS	159Kb / 10P	Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)
	IRFIZ24N	105Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=14A)
	IRFRU024N	178Kb / 10P	Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A??
	IRF3315	124Kb / 8P	Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
	IRFZ24V	200Kb / 8P	Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A)
	IRF530N	212Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A)
	IRFBA1405P	238Kb / 9P	Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A??
	IRF3205S	160Kb / 10P	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??
	IRFR2605	345Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
	IRFP054N	109Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A??

About International Rectifier

International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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