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FSYA254R3 Datasheet (PDF) - Intersil Corporation

FSYA254R3 Datasheet PDF - Intersil Corporation
Part # FSYA254R3
Download  FSYA254R3 Download

File Size   55.82 Kbytes
Page   8 Pages
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

FSYA254R3 Datasheet (PDF)

Go To PDF Page Download Datasheet
FSYA254R3 Datasheet PDF - Intersil Corporation

Part # FSYA254R3
Download  FSYA254R3 Click to download

File Size   55.82 Kbytes
Page   8 Pages
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

FSYA254R3 Datasheet (HTML) - Intersil Corporation

FSYA254R3 Datasheet HTML 1Page - Intersil Corporation FSYA254R3 Datasheet HTML 2Page - Intersil Corporation FSYA254R3 Datasheet HTML 3Page - Intersil Corporation FSYA254R3 Datasheet HTML 4Page - Intersil Corporation FSYA254R3 Datasheet HTML 5Page - Intersil Corporation FSYA254R3 Datasheet HTML 6Page - Intersil Corporation FSYA254R3 Datasheet HTML 7Page - Intersil Corporation FSYA254R3 Datasheet HTML 8Page - Intersil Corporation

FSYA254R3 Product details

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

Features
• 21A, 250V, rDS(ON) = 0.150Ω
• Total Dose
    - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
    - Safe Operating Area Curve for Single Event Effects
    - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
    - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
    - Typically Survives 2E12 if Current Limited to IDM
• Photo Current
    - 15nA Per-RAD(Si)/s Typically
• Neutron
    - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
    - Usable to 1E14 Neutrons/cm2




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About Intersil Corporation


Intersil Corporation was an American semiconductor company that specialized in the design and manufacture of high-performance analog and mixed-signal integrated circuits.
The company was founded in 1967 and was known for its expertise in power management, data conversion, and radio frequency (RF) technologies.
Intersil's products were used in a wide range of applications such as consumer electronics, industrial, telecommunications, and aerospace and defense.
In 2016, Intersil was acquired by Renesas Electronics Corporation, a Japanese semiconductor company.
The Intersil brand and technology continue to be developed and sold as part of Renesas' portfolio of products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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