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STL11N3LLH6 Datasheet (PDF) - STMicroelectronics
STL11N3LLH6 Datasheet PDF - STMicroelectronics
Part # STL11N3LLH6
Download  STL11N3LLH6 Download
File Size   1031.03 Kbytes
Page   14 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 30 V, 0.006 typ., 11 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 3.3 x 3.3 package

STL11N3LLH6 Datasheet (PDF)

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STL11N3LLH6 Datasheet PDF - STMicroelectronics

Part # STL11N3LLH6
Download  STL11N3LLH6 Click to download

File Size   1031.03 Kbytes
Page   14 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 30 V, 0.006 typ., 11 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 3.3 x 3.3 package

STL11N3LLH6 Datasheet (HTML) - STMicroelectronics


STL11N3LLH6 Product details

Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. D(5, 6, 7, 8) G(4) S(1, 2, 3) 8 1 2 3 4 7 6 5 AM15810v1 PowerFLAT™ 3.3 x 3.3 1 2 3 4

Features
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
■ Very low switching gate charge

Applications
■ Switching applications




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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