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STF10NM60ND Datasheet (PDF) - STMicroelectronics
STF10NM60ND Datasheet PDF - STMicroelectronics
Part # STF10NM60ND
Download  STF10NM60ND Download
File Size   1227.8 Kbytes
Page   19 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

STF10NM60ND Datasheet (PDF)

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STF10NM60ND Datasheet PDF - STMicroelectronics

Part # STF10NM60ND
Download  STF10NM60ND Click to download

File Size   1227.8 Kbytes
Page   19 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

STF10NM60ND Datasheet (HTML) - STMicroelectronics


STF10NM60ND Product details

Description
This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt avalanche capabilities

Applications
■ Switching applications




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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