The RF Sub–Micron MOSFET Line
RF Power Field-Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and wireless local loop.

• Specified Two–Tone Performance @ 2000 MHz, 26 Volts
   Output Power = 30 Watts (PEP)
   Power Gain = 9 dB
   Efficiency = 30%
   Intermodulation Distortion = –29 dBc
• Typical Single–Tone Performance at 2000 MHz, 26 Volts
   Output Power = 30 Watts (CW)
   Power Gain = 9.5 dB
   Efficiency = 45%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW) Output Power