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AOB1606L Datasheet (PDF) - Alpha & Omega Semiconductors

AOB1606L Datasheet PDF - Alpha & Omega Semiconductors
Part # AOB1606L
Download  AOB1606L Download
File Size   410.27 Kbytes
Page   6 Pages
Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors
Description 60V N-Channel Rugged Planar MOSFET

AOB1606L Datasheet (PDF)

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AOB1606L Datasheet PDF - Alpha & Omega Semiconductors

Part # AOB1606L
Download  AOB1606L Click to download

File Size   410.27 Kbytes
Page   6 Pages
Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors
Description 60V N-Channel Rugged Planar MOSFET

AOB1606L Datasheet (HTML) - Alpha & Omega Semiconductors


AOB1606L Product details

General Description
The AOT1606L/AOB1606L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.

Product Summary
    VDS                                        60V
    ID (at VGS=10V)                    178A
    RDS(ON) (at VGS=10V)         < 6.3mΩ

    100% UIS Tested
    100% Rg Tested




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About Alpha & Omega Semiconductors


Alpha & Omega Semiconductors (AOS) is a global semiconductor company that specializes in the design and manufacture of power management integrated circuits (ICs).
The company was founded in 1995 and has its headquarters in San Jose, California.
AOS provides a wide range of power management solutions for applications in consumer electronics, computing, telecommunications, and industrial systems, among others.
The company is known for its cutting-edge technology and innovative products, and it has a strong reputation in the semiconductor industry.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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