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NP55N04SLG Datasheet (PDF) - Renesas Technology Corp

NP55N04SLG Datasheet PDF - Renesas Technology Corp
Part # NP55N04SLG
Download  NP55N04SLG Download
File Size   255.65 Kbytes
Page   8 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS FIELD EFFECT TRANSISTOR

NP55N04SLG Datasheet (PDF)

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NP55N04SLG Datasheet PDF - Renesas Technology Corp

Part # NP55N04SLG
Download  NP55N04SLG Click to download

File Size   255.65 Kbytes
Page   8 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS FIELD EFFECT TRANSISTOR

NP55N04SLG Datasheet (HTML) - Renesas Technology Corp


NP55N04SLG Product details

Description
The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features
• Channel temperature 175 degree rating
• Super low on-state resistance
   ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A)
   ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A)
   ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A)
• Low input capacitance
• Gate to Source ESD protection diode built-in




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About Renesas Technology Corp


Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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