DESCRIPTION
The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array.

FEATURES
• High Speed, High Density Memory Module
    —150ns, 120ns, 90ns and 70ns Access Times Available
    —1 Megabit Memory in 1 square inch.
• Flexible Multiplane Architecture
    —Four Separate Chip Selects
    —32 Separate I/Os
        • User Configurable I/Os—x8, x16, or x32
        • User Configurable Page Size—64 Double words, 128 Words, or 256 Bytes
    —Concurrent Read/Write Operations
        • Able to Continue Reading During a Nonvolatile Write Cycle.
• 5 Volt Byte or Page Alterable
    —No Erase Before Write
• Software Data Protection
• Early End of Write Polling
    —DATA Polling
    —Toggle Bit Polling
• High Reliability
    —Endurance: 100,000 Cycles
    —Data Retention: 100 Years