Manufacturer | Part # | Datasheet | Description |
Gunter Seniconductor Gm... |
GFC460
|
102Kb / 1P |
N Channel Power MOSFET with high VDS
|
Leshan Radio Company |
LNB2294LT1G
|
606Kb / 5P |
110V N-Channel Enhancement-Mode MOSFET VDS= 110V
|
LN2306ELT1G
|
715Kb / 5P |
N-Channel 30V(D-S) MOSFET VDS= 30V
|
LP2035LT1G
|
947Kb / 5P |
20V P-Channel MOSFET VDS =-20V
|
LP2323LT1G
|
424Kb / 3P |
12V P-Channel Enhancement MOSFET VDS =-12V
|
LP137N3T5G
|
563Kb / 6P |
20V P-Channel Enhancement MOSFET VDS = -20V
|
S-LP3407LT1G
|
476Kb / 6P |
30V P-Channel Enhancement-Mode MOSFET VDS = -30V
|
LPB3408LT1G
|
525Kb / 5P |
30V P-Channel (D-S) MOSFET VDS = -30V
|
LP4217T1G
|
256Kb / 3P |
20V P-Channel (D-S) MOSFET VDS = -20V
|
LP3443LT1G
|
338Kb / 6P |
20V P-Channel Enhancement-Mode MOSFET VDS = -20V
|