RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

• Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts,
   IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
   IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
   1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
   over a 30 kHz Bandwidth at f1 -885 Khz and f2 +885 kHz. Distortion
   Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and
   f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
      Output Power — 18 Watts Avg.
      Power Gain — 13.0 dB
      Efficiency — 23%
      ACPR — -51 dB
      IM3 — -36.5 dBc
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power

Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.