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P16NE Datasheet (PDF) - STMicroelectronics
P16NE Datasheet PDF - STMicroelectronics
Part # P16NE
Download  P16NE Download
File Size   337.11 Kbytes
Page   9 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

P16NE Datasheet (PDF)

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P16NE Datasheet PDF - STMicroelectronics

Part # P16NE
Download  P16NE Click to download

File Size   337.11 Kbytes
Page   9 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

P16NE Datasheet (HTML) - STMicroelectronics


P16NE Product details

DESCRIPTION
This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.08 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ 175oC OPERATING TEMPERATURE
■ HIGH dV/dt CAPABILITY
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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