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STD3N25 Datasheet (PDF) - STMicroelectronics
STD3N25 Datasheet PDF - STMicroelectronics
Part # STD3N25
Download  STD3N25 Download
File Size   172.35 Kbytes
Page   10 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD3N25 Datasheet (PDF)

Go To PDF Page Download Datasheet
STD3N25 Datasheet PDF - STMicroelectronics

Part # STD3N25
Download  STD3N25 Click to download

File Size   172.35 Kbytes
Page   10 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD3N25 Datasheet (HTML) - STMicroelectronics


STD3N25 Product details

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 1 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
   PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252)
   POWER PACKAGE IN TAPE & REEL
   (SUFFIX ”T4”)

APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIAL ACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR
   TELECOM, INDUSTRIAL AND CONSUMER
   ENVIRONMENT
■ PARTICULARLY SUITABLE FOR
   ELECTRONIC FLUORESCENT LAMP
   BALLASTS




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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