1 Features
• G = 1/2 amplifier
• G = 2 amplifier
• Low offset voltage: 40 μV (maximum)
• Low offset voltage drift: ±2 μV/°C (maximum)
• Low noise: 18 nV/√Hz at 1 kHz
• Low gain error: ±0.03% (maximum)
• High common-mode rejection: 88 dB (minimum)
• Wide bandwidth: 2 MHz GBW
• Low quiescent current: 1.1 mA per amplifier
• High slew rate: 18 V/μs
• High capacitive load drive capability: 500 pF
• Wide supply range:
– Single supply: 4.5 V to 36 V
– Dual supply: ±2.25 V to ±18 V
• Specified temperature range:
–40°C to +125°C
• Packages: 8-Pin MSOP and SOIC, 10-pin VSON

2 Applications
• AC drive position feedback
• Servo drive position feedback
• Condition monitoring module (voltage, current)
• Power supply module
• Semiconductor test

3 Description
The INA592 device is a low-power, wide bandwidth
difference amplifier consisting of a precision
operational amplifier (op amp) and a precision
resistor network. Excellent tracking of resistors (TCR)
maintains gain accuracy and common-mode rejection
over temperature. Unique features such as low offset
40 μV (maximum), low offset drift (2 μV/°C maximum)
high slew rate (18 V/μs), and high capacitive load
drive of up to 500 pF make the INA592 a robust,
high-performance difference amplifier for high-voltage
industrial applications. The common-mode range of
the internal op amp extends to the negative supply,
enabling the device to operate in single-supply
applications. The device operates on single (4.5 V to
36 V) or dual supplies (±2.25 V to ±18 V).
The difference amplifier is the foundation of many
commonly used circuits. The INA592 provides this
circuit function without using an expensive precision
resistor network.