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STAV36171AY2 Datasheet (PDF) - Innogration Technologies, Inc.
STAV36171AY2 Datasheet PDF - Innogration Technologies, Inc.
Part # STAV36171AY2
Download  STAV36171AY2 Download
File Size   1260.19 Kbytes
Page   7 Pages
Manufacturer  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Description Gallium Nitride 50V, 170W, 3.3-3.8GHz RF Power Transistor

STAV36171AY2 Datasheet (PDF)

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STAV36171AY2 Datasheet PDF - Innogration Technologies, Inc.

Part # STAV36171AY2
Download  STAV36171AY2 Click to download

File Size   1260.19 Kbytes
Page   7 Pages
Manufacturer  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Description Gallium Nitride 50V, 170W, 3.3-3.8GHz RF Power Transistor

STAV36171AY2 Datasheet (HTML) - Innogration Technologies, Inc.


STAV36171AY2 Product details

Description
The STAV36171AY2 is an internally matched, single ended 170watt, GaN HEMT, ideal for 5G applications
from 3.3 to 3.8GHz.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Sub-4GHz pulse or CW amplifier
 5G base station amplifier
 Doherty power amplifier




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