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STF80N240K6 Datasheet (PDF) - STMicroelectronics
STF80N240K6 Datasheet PDF - STMicroelectronics
Part # STF80N240K6
Download  STF80N240K6 Download
File Size   245.65 Kbytes
Page   13 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package

STF80N240K6 Datasheet (PDF)

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STF80N240K6 Datasheet PDF - STMicroelectronics

Part # STF80N240K6
Download  STF80N240K6 Click to download

File Size   245.65 Kbytes
Page   13 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package

STF80N240K6 Datasheet (HTML) - STMicroelectronics


STF80N240K6 Product details

Features
• Worldwide best RDS(on) x area
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected

Applications
• Flyback converter
• Adapters for tablets, notebook and AIO
• LED lighting

Description
This very high voltage N-channel Power MOSFET is designed using the ultimate
MDmesh K6 technology based on 20 years STMicroelectronics experience on super
junction technology. The result is the best-in-class on-resistance per area and gate
charge for applications requiring superior power density and high efficiency.




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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