General Description
2N-ch MOSFETs with extreme high cell density,
which provide excellent RDSON and gate charge
for most of the small power switching and
load switch applications. The meet the RoHS and
The is the highest performance trench
Product requirement with full function reliability approved.

General Features
VDS = 30V ID = 9A
RDS(ON) < 13mΩ @ VGS=10 V
RDS(ON) < 18mΩ @ VGS=4.5V