1.1 General description
Intermediate level N-channel and P-channel complementary pair enhancement mode
Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This
product is designed and qualified for use in computing, communications, consumer and
industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
Motor and actuator drivers
Power management
Synchronized rectification