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BST52 Datasheet (PDF) - Diodes Incorporated

BST52 Datasheet PDF - Diodes Incorporated
Part # BST52
Download  BST52 Download
File Size   225.48 Kbytes
Page   6 Pages
Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated
Description 80V NPN SILICON PLANAR DARLINGTON TRANSISTOR IN SOT89

BST52 Datasheet (PDF)

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BST52 Datasheet PDF - Diodes Incorporated

Part # BST52
Download  BST52 Click to download

File Size   225.48 Kbytes
Page   6 Pages
Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated
Description 80V NPN SILICON PLANAR DARLINGTON TRANSISTOR IN SOT89

BST52 Datasheet (HTML) - Diodes Incorporated


BST52 Product details

Features
• BVCEO > 80V
• High current gain
• Max Continuous Current IC = 500mA
• Fast switching
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free, “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability




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About Diodes Incorporated


Diodes Incorporated is a publicly traded company that designs, manufactures, and supplies a wide range of discrete, analog, and mixed-signal semiconductors and complete power solutions.
The company was founded in 1964 and is headquartered in Plano, Texas.
It operates globally with sales, support, and design centers in North America, Europe, and Asia.
Diodes Incorporated serves a variety of industries, including automotive, communications, computing, consumer, and industrial.
The company offers a wide range of products, including diodes, rectifiers, transistors, voltage regulators, MOSFETs, LED drivers, and protection devices, among others.
The company's mission is to provide customers with high-quality, high-reliability products and excellent customer service.
With a focus on innovation and customer satisfaction, Diodes Incorporated is committed to becoming a leading provider of power management solutions.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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