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RJF0619JPD Datasheet (PDF) - Renesas Technology Corp

RJF0619JPD Datasheet PDF - Renesas Technology Corp
Part # RJF0619JPD
Download  RJF0619JPD Download
File Size   154.63 Kbytes
Page   8 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description 60V, 30A Silicon N Channel Thermal FET Power Switching

RJF0619JPD Datasheet (PDF)

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RJF0619JPD Datasheet PDF - Renesas Technology Corp

Part # RJF0619JPD
Download  RJF0619JPD Click to download

File Size   154.63 Kbytes
Page   8 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description 60V, 30A Silicon N Channel Thermal FET Power Switching

RJF0619JPD Datasheet (HTML) - Renesas Technology Corp


RJF0619JPD Product details

Features
• Logic level operation (4 V Gate drive).
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built-in the current limitation circuit.
• Power supply voltage applies 12 V and 24 V.
• AEC-Q101 Compliant
• Endurance capability against to ESD.




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About Renesas Technology Corp


Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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