Low Noise Silicon Bipolar RF Transistor

• For ESD protected high gain low noise amplifier
• High ESD robustness
   typical value 1000 V (HBM)
• Outstanding Gms = 21.5 dB @ 1.8 GHz
   Minimum noise figure NFmin = 0.9 dB @ 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free package
   with visible leads
• Qualification report according to AEC-Q101 available