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M29W640FT60N6F Datasheet (PDF) - STMicroelectronics

M29W640FT60N6F Datasheet PDF - STMicroelectronics
Part # M29W640FT60N6F
Download  M29W640FT60N6F Download

File Size   478.8 Kbytes
Page   72 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

M29W640FT60N6F Datasheet (PDF)

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M29W640FT60N6F Datasheet PDF - STMicroelectronics

Part # M29W640FT60N6F
Download  M29W640FT60N6F Click to download

File Size   478.8 Kbytes
Page   72 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

M29W640FT60N6F Datasheet (HTML) - STMicroelectronics


M29W640FT60N6F Product details

Summary description
The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte (generally groups of four 64 KByte blocks), to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Features summary
■ Supply Voltage
   – VCC = 2.7V to 3.6V for Program, Erase, Read
   – VPP =12 V for Fast Program (optional)
■ Asynchronous Random/Page Read
   – Page Width: 4 Words
   – Page Access: 25ns
   – Random Access: 60ns, 70ns
■ Programming Time
   – 10 µs per Byte/Word typical
   – 4 Words/8 Bytes Program
■ 135 memory blocks
   – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location)
   – 127 Main Blocks, 64 KBytes each
■ Program/Erase Controller
   – Embedded Byte/Word Program algorithms
■ Program/Erase Suspend and Resume
   – Read from any Block during Program Suspend
   – Read and Program another Block during Erase Suspend
■ Unlock Bypass Program command
   – Faster Production/Batch Programming
■ VPP/WP pin for Fast Program and Write Protect
■ Temporary Block Unprotection mode
■ Common Flash Interface
   – 64-bit Security Code
■ Extended Memory Block
   – Extra block used as security block or to store additional information
■ Low power consumption
   – Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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