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RF2L15200CB4 Datasheet (PDF) - STMicroelectronics

RF2L15200CB4 Datasheet PDF - STMicroelectronics
Part # RF2L15200CB4
Download  RF2L15200CB4 Download
File Size   774.13 Kbytes
Page   13 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor

RF2L15200CB4 Datasheet (PDF)

Go To PDF Page Download Datasheet
RF2L15200CB4 Datasheet PDF - STMicroelectronics

Part # RF2L15200CB4
Download  RF2L15200CB4 Click to download

File Size   774.13 Kbytes
Page   13 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description 200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor

RF2L15200CB4 Datasheet (HTML) - STMicroelectronics


RF2L15200CB4 Product details

Features
High efficiency and linear gain operations
• Integrated ESD protection
• Large positive and negative gate-source voltage range for improved class C
operation
• Excellent thermal stability, low HCI drift
• In compliance with the european directive 2002/95/EC

Description
The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication
and ISM applications with frequencies from HF to 1.5 GHz. It can be used in class
AB, B or C for all typical modulation formats.

Applications
• Broadband commercial communications
• TV broadcast
• Avioncs
• Industrial




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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