Features

High ruggedness
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Low RDS(ON) (Typ 12.3mΩ)@VGS=2.5V (Typ 9.4mΩ)@VGS=4.5V
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Low Gate Charge (Typ 15.4nC)
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Improved dv/dt Capability
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100% Avalanche Tested
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Application:DC-DC Converter, Inverter, Synchronous Rectification

General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.