IXFT12N100 Datasheet(PDF) - IXYS Corporation

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IXFT12N100 Datasheet (PDF) - IXYS Corporation

IXFT12N100 Datasheet PDF - IXYS Corporation


Part #	IXFT12N100

Download	IXFT12N100 Download

File Size	556.28 Kbytes

Page	4 Pages

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Description

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

IXFT12N100 Datasheet (PDF)

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IXFT12N100 Datasheet PDF - IXYS Corporation


Part #	IXFT12N100

Download	IXFT12N100 Click to download

File Size	556.28 Kbytes

Page	4 Pages

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

Logo

Description	N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

IXFT12N100 Datasheet (HTML) - IXYS Corporation

IXFT12N100 Datasheet HTML 1Page - IXYS Corporation

IXFT12N100 Datasheet HTML 2Page - IXYS Corporation

IXFT12N100 Datasheet HTML 3Page - IXYS Corporation

IXFT12N100 Datasheet HTML 4Page - IXYS Corporation

IXFT12N100 Product details

Features
• International standard package
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier

Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays

Advantages
• Surface mountable, high power package
• Space savings
• High power density

Similar Part No. - IXFT12N100

Manufacturer	Part #	Datasheet	Description
Inchange Semiconductor ...	IXFT12N100	400Kb / 2P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXFT12N100F	99Kb / 2P	HiPerRF Power MOSFETs
	IXFT12N100F	112Kb / 2P	HiPerRF Power MOSFETs
	IXFT12N100Q	146Kb / 4P	HiPerFETTM Power MOSFETs Q Class
	IXFT12N100QHV	205Kb / 5P	High Voltage Power MOSFET

Similar Description - IXFT12N100

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IXFH14N100Q2	564Kb / 4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
	IXFN38N100Q2	565Kb / 4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
	IXFH8N80	206Kb / 4P	HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
	IXFN100N25	78Kb / 2P	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low
	VMO60-05F	50Kb / 2P	High dv/dt, Low-trr, HDMOS-TM Family
	IXTH28N50Q	177Kb / 4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
	IXTQ24N55Q	517Kb / 2P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
	IXFH36N55Q	171Kb / 4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
	IXFT14N100	628Kb / 4P	N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
	VMM45-02F	41Kb / 2P	Phaseleg Configuration High dv/dt, Low trr, HDMOSTM Family

About IXYS Corporation

IXYS Corporation is a technology company that specializes in the design, manufacture, and sale of power semiconductors and integrated circuits (ICs). The company was founded in 1983 and is headquartered in Milpitas, California. IXYS has a global presence, with operations and customers in over 60 countries around the world.

IXYS provides a wide range of products and solutions, including power MOSFETs, power bipolar transistors, thyristors, diodes, and ICs for power management and control applications. The company's products are used in a variety of applications, including renewable energy, industrial, automotive, and consumer electronics.

IXYS is known for its expertise in power semiconductor technology and its ability to provide high-performance and cost-effective solutions to its customers. The company is committed to innovation and research and development and is actively involved in the development of new technologies and solutions for the power semiconductor market. IXYS is a recognized leader in the power semiconductor market and continues to provide high-quality products and services to its customers.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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