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AM29PL320D Datasheet (PDF) - SPANSION

AM29PL320D Datasheet PDF - SPANSION
Part # AM29PL320D
Download  AM29PL320D Download

File Size   947.82 Kbytes
Page   50 Pages
Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION
Description 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory

AM29PL320D Datasheet (PDF)

Go To PDF Page Download Datasheet
AM29PL320D Datasheet PDF - SPANSION

Part # AM29PL320D
Download  AM29PL320D Click to download

File Size   947.82 Kbytes
Page   50 Pages
Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION
Description 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory

AM29PL320D Datasheet (HTML) - SPANSION

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AM29PL320D Product details

GENERAL DESCRIPTION
The Am29PL320D is a 32 Mbit, 3.0 Volt-only page mode Flash memory device organized as 2,097,152 words or 1,048,576 double words. The device is offered in an 84-ball FBGA package. The word-wide data (x16) appears on DQ15–DQ0; the double wordwide (x32) data appears on DQ31–DQ0. The device is available in both top and bottom boot versions. This device can be programmed in-system or with in standard EPROM programmers. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations.

DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ 32 Mbit Page Mode device
   — Word (16-bit) or double word (32-bit) mode
      selectable via WORD# input
   — Page size of 8 words/4 double words: Fast page
      read access from random locations within the
      page
■ Single power supply operation
   — Full voltage range: 2.7 to 3.6 volt read and write
      operations for battery-powered applications
   — Regulated voltage range: 3.0 to 3.6 volt read and
      write operations and for compatibility with high
      performance 3.3 volt microprocessors
■ Flexible sector architecture
   — Sector sizes (x16 configuration): One 16 Kword,
      two 8 Kword, one 96 Kword and fifteen 128
      Kword sectors
   — Supports full chip erase
■ SecSi™ (Secured Silicon) Sector region
   — Current version of device has 512 words (256
      double words); future versions will have 128
      words (64 double words)
■ Top or bottom boot block configuration
■ Manufactured on 0.23 µm process technology
■ 20-year data retention at 125°C
■ Minimum 1 million erase cycles guarantee
   per sector

PERFORMANCE CHARACTERISTICS
■ High performance read access times
   — Page access times as fast as 20 ns
   — Random access times as fast as 60 ns
■ Power consumption (typical values)
   — Initial page read current: 4 mA (1 MHz),
      40 mA (10 MHz)
   — Intra-page read current: 15 mA (10 MHz),
      50 mA (33 MHz)
   — Program/erase current: 25 mA
   — Standby mode current: 2 µA



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