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  • 2SC1008-R-AP

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    The **2SC1008-R-AP** is an NPN epitaxial silicon transistor designed primarily for use in high-frequency amplifiers and general-purpose switching applications. It is manufactured by Micro Commercial Components (MCC) and follows standard industry specifications for the 2SC1008 series. --- ### ## 1. Technical Specifications The following table outlines the absolute maximum ratings and key electrical characteristics for the 2SC1008-R-AP: | Parameter | Symbol | Rating/Value | | :--- | :--- | :--- | | **Collector-Base Voltage** | $V_{CBO}$ | 80V | | **Collector-Emitter Voltage** | $V_{CEO}$ | 60V | | **Emitter-Base Voltage** | $V_{EBO}$ | 8.0V | | **Collector Current (DC)** | $I_C$ | 700mA | | **Collector Power Dissipation** | $P_C$ | 800mW | | **DC Current Gain (hFE)** | $h_{FE}$ | 40 to 80 (R Grade) | | **Transition Frequency** | $f_T$ | 50 MHz (Min) | | **Package Type** | TO-92 | Plastic Enclosure | --- ### ## 2. Part Number Breakdown Understanding the suffix codes is essential for proper integration: * **2SC1008**: The base model number (NPN Transistor). * **-R**: This denotes the **hFE (Gain) Classification**. In this specific series, "R" indicates a gain range typically between **40 and 80**. * **-AP**: This indicates the **Packaging Style**. "AP" stands for **Ammo Pack**, meaning the transistors are provided on a continuous tape for automated insertion machines. --- ### ## 3. Physical Configuration The 2SC1008-R-AP comes in a **TO-92** package. Looking at the flat side with the leads pointing down, the pinout is generally as follows: 1. **Emitter (E)** 2. **Collector (C)** 3. **Base (B)** > *Note: Always verify the pinout with the specific manufacturer datasheet (MCC) before PCB layout, as some regional variations exist.* --- ### ## 4. Common Applications Due to its 700mA current handling and 50MHz frequency response, it is used in: * **Signal Amplification**: Low-power audio pre-amps and RF signal processing. * **Switching**: Driving small relays, LEDs, or low-power motors. * **Driver Stages**: Acting as a buffer or driver for high-power transistors. ---
    ✨ Follow-up Questions
    • ⤷ What are the differences between the R
    • ⤷ O
    • ⤷ Y
    • ⤷ and G gain classifications for this transistor?
    • ⤷ Can the 2SC1008-R-AP be used as a direct replacement for the 2N2222?
    • ⤷ What are the thermal considerations when running this transistor at its maximum 800mW dissipation?