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MTP6N60E Datasheet (PDF) - Motorola, Inc

MTP6N60E Datasheet PDF - Motorola, Inc
Part No. MTP6N60E
Download  MTP6N60E Click to view

File Size   156.71 Kbytes
Page   8 Pages
Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc
Description TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

MTP6N60E Datasheet (PDF)

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MTP6N60E Datasheet PDF - Motorola, Inc

Part No. MTP6N60E
Download  MTP6N60E Click to view

File Size   156.71 Kbytes
Page   8 Pages
Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc
Description TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

MTP6N60E Datasheet (HTML) - Motorola, Inc

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MTP6N60E Product details

TMOS E-FET™
Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon Gate

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature



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