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2SC1971 Datasheet (PDF) - Mitsubishi Electric Semiconductor

2SC1971 Datasheet PDF - Mitsubishi Electric Semiconductor
Part No. 2SC1971
Download  2SC1971 Click to view

File Size   127.93 Kbytes
Page   3 Pages
Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
Description NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

2SC1971 Datasheet (PDF)

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2SC1971 Datasheet PDF - Mitsubishi Electric Semiconductor

Part No. 2SC1971
Download  2SC1971 Click to view

File Size   127.93 Kbytes
Page   3 Pages
Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
Description NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

2SC1971 Datasheet (HTML) - Mitsubishi Electric Semiconductor

2SC1971 Datasheet HTML 1Page - Mitsubishi Electric Semiconductor 2SC1971 Datasheet HTML 2Page - Mitsubishi Electric Semiconductor 2SC1971 Datasheet HTML 3Page - Mitsubishi Electric Semiconductor

2SC1971 Product details

DESCRIPTION
2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications.

FEATURES
● High power gain: Gpe ≥ 10dB,
   @VCC = 13.5V, Po = 6W, f = 175MHz
● Emitter ballasted construction, gold metallization for high
   reliability and good performances.
● TO-220 package similar is combinient for mounting.
● Ability to withstand more than 20:1 load
   VSWR when operated at VCC = 15.2V, Po = 6W, f = 175MHz

APPLICATION
   4 to 5 watts output power amplifiers in VHF band applications.



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